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Other articles related with "AlGaN/GaN HEMT"：
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117105 |
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications |
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Chin. Phys. B
2022 Vol.31 (11): 117105-117105
[Abstract]
(292)
[HTML 1 KB]
[PDF 831 KB]
(89)
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117301 |
Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华) |
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Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress |
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Chin. Phys. B
2022 Vol.31 (11): 117301-117301
[Abstract]
(303)
[HTML 1 KB]
[PDF 916 KB]
(36)
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27301 |
Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching |
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Chin. Phys. B
2022 Vol.31 (2): 27301-027301
[Abstract]
(468)
[HTML 1 KB]
[PDF 3554 KB]
(146)
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108502 |
Lixiang Chen(陈丽香), Min Ma(马敏), Jiecheng Cao(曹杰程), Jiawei Sun(孙佳惟), Miaoling Que(阙妙玲), and Yunfei Sun(孙云飞) |
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Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (10): 108502-108502
[Abstract]
(458)
[HTML 1 KB]
[PDF 2657 KB]
(135)
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87305 |
Sheng Hu(胡晟), Ling Yang(杨凌), Min-Han Mi(宓珉瀚), Bin Hou(侯斌), Sheng Liu(刘晟), Meng Zhang(张濛), Mei Wu(武玫), Qing Zhu(朱青), Sheng Wu(武盛), Yang Lu(卢阳), Jie-Jie Zhu(祝杰杰), Xiao-Wei Zhou(周小伟), Ling Lv(吕玲), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN: Si/GaN: C multi-heterostructure at different temperatures |
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Chin. Phys. B
2020 Vol.29 (8): 87305-087305
[Abstract]
(603)
[HTML 0 KB]
[PDF 744 KB]
(129)
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47302 |
Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Xiao-Can Peng(彭晓灿) |
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Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer |
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Chin. Phys. B
2019 Vol.28 (4): 47302-047302
[Abstract]
(743)
[HTML 1 KB]
[PDF 496 KB]
(231)
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27302 |
Hao Wu(吴浩), Bao-Xing Duan(段宝兴), Luo-Yun Yang(杨珞云), Yin-Tang Yang(杨银堂) |
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Theoretical analytic model for RESURF AlGaN/GaN HEMTs |
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Chin. Phys. B
2019 Vol.28 (2): 27302-027302
[Abstract]
(1122)
[HTML 1 KB]
[PDF 504 KB]
(263)
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98504 |
Jianfei Li(李建飞), Yuanjie Lv(吕元杰), Changfu Li(李长富), Ziwu Ji(冀子武), Zhiyong Pang(庞智勇), Xiangang Xu(徐现刚), Mingsheng Xu(徐明升) |
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Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs |
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Chin. Phys. B
2017 Vol.26 (9): 98504-098504
[Abstract]
(616)
[HTML 0 KB]
[PDF 937 KB]
(339)
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17304 |
Ling Yang(杨凌), Xiao-Wei Zhou(周小伟), Xiao-Hua Ma(马晓华), Ling Lv(吕玲), Yan-Rong Cao(曹艳荣), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2017 Vol.26 (1): 17304-017304
[Abstract]
(685)
[HTML 1 KB]
[PDF 450 KB]
(475)
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127305 |
Wei Mao(毛维), Ju-Sheng Fan(范举胜), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate |
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Chin. Phys. B
2016 Vol.25 (12): 127305-127305
[Abstract]
(964)
[HTML 1 KB]
[PDF 514 KB]
(517)
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87304 |
Xiao-Ling Duan(段小玲), Jin-Cheng Zhang(张进成), Ming Xiao(肖明), Yi Zhao(赵一), Jing Ning(宁静), Yue Hao(郝跃) |
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Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures |
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Chin. Phys. B
2016 Vol.25 (8): 87304-087304
[Abstract]
(657)
[HTML 1 KB]
[PDF 865 KB]
(411)
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17303 |
Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃) |
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Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates |
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Chin. Phys. B
2016 Vol.25 (1): 17303-017303
[Abstract]
(669)
[HTML 1 KB]
[PDF 1923 KB]
(635)
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117307 |
Zhang Sheng (张昇), Wei Ke (魏珂), Yu Le (余乐), Liu Guo-Guo (刘果果), Huang Sen (黄森), Wang Xin-Hua (王鑫华), Pang Lei (庞磊), Zheng Ying-Kui (郑英奎), Li Yan-Kui (李艳奎), Ma Xiao-Hua (马晓华), Sun Bing (孙兵), Liu Xin-Yu (刘新宇) |
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AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation |
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Chin. Phys. B
2015 Vol.24 (11): 117307-117307
[Abstract]
(651)
[HTML 1 KB]
[PDF 1534 KB]
(577)
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107305 |
Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Lu Yang (卢阳), Zhao Bo-Chao (赵博超), Zhang Hong-He (张宏鹤), Zhang Meng (张濛), Cao Meng-Yi (曹梦逸), Hao Yue (郝跃) |
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A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT |
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Chin. Phys. B
2015 Vol.24 (10): 107305-107305
[Abstract]
(796)
[HTML 1 KB]
[PDF 897 KB]
(477)
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48503 |
Zhou Xing-Ye (周幸叶), Feng Zhi-Hong (冯志红), Wang Yuan-Gang (王元刚), Gu Guo-Dong (顾国栋), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军) |
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Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
2015 Vol.24 (4): 48503-048503
[Abstract]
(905)
[HTML 0 KB]
[PDF 462 KB]
(627)
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27101 |
Ma Xiao-Hua (马晓华), Zhang Ya-Man (张亚嫚), Wang Xin-Hua (王鑫华), Yuan Ting-Ting (袁婷婷), Pang Lei (庞磊), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values |
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Chin. Phys. B
2015 Vol.24 (2): 27101-027101
[Abstract]
(644)
[HTML 0 KB]
[PDF 457 KB]
(603)
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27302 |
Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Chen Yong-He (陈永和), Kang Di (康迪), Zhang Jian-Kun (张建坤), Wang Chong (王冲), Mo Jiang-Hui (默江辉), Li Liang (李亮), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation |
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Chin. Phys. B
2015 Vol.24 (2): 27302-027302
[Abstract]
(946)
[HTML 0 KB]
[PDF 390 KB]
(608)
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127304 |
Pongthavornkamol Tiwat (林体元), Pang Lei (庞磊), Yuan Ting-Ting (袁婷婷), Liu Xin-Yu (刘新宇) |
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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method |
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Chin. Phys. B
2014 Vol.23 (12): 127304-127304
[Abstract]
(615)
[HTML 1 KB]
[PDF 958 KB]
(483)
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97307 |
Wu Mei (武玫), Zheng Da-Yong (郑大勇), Wang Yuan (王媛), Chen Wei-Wei (陈伟伟), Zhang Kai (张凯), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range |
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Chin. Phys. B
2014 Vol.23 (9): 97307-097307
[Abstract]
(712)
[HTML 1 KB]
[PDF 315 KB]
(1541)
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87201 |
Cao Meng-Yi (曹梦逸), Lu Yang (卢阳), Wei Jia-Xing (魏家行), Chen Yong-He (陈永和), Li Wei-Jun (李卫军), Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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An improved EEHEMT model for kink effect on AlGaN/GaN HEMT |
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Chin. Phys. B
2014 Vol.23 (8): 87201-087201
[Abstract]
(820)
[HTML 1 KB]
[PDF 446 KB]
(1401)
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38403 |
Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美) |
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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (3): 38403-038403
[Abstract]
(691)
[HTML 1 KB]
[PDF 1317 KB]
(885)
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107303 |
Chen Wei-Wei (陈伟伟), Ma Xiao-Hua (马晓华), Hou Bin (侯斌), Zhu Jie-Jie (祝杰杰), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress |
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Chin. Phys. B
2013 Vol.22 (10): 107303-107303
[Abstract]
(656)
[HTML 1 KB]
[PDF 382 KB]
(687)
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128501 |
Kong Xin (孔欣), Wei Ke (魏珂), Liu Guo-Guo (刘果果), Liu Xin-Yu (刘新宇) |
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Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application |
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Chin. Phys. B
2012 Vol.21 (12): 128501-128501
[Abstract]
(1130)
[HTML 1 KB]
[PDF 641 KB]
(2100)
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108503 |
Fu Li-Hua (付立华), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Zhang Rongm (张荣), Zheng You-Dou (郑有炓), Wei Ke (魏珂), Liu Xin-Yu (刘新宇) |
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High-field-induced electron detrapping in An AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2012 Vol.21 (10): 108503-108503
[Abstract]
(1195)
[HTML 1 KB]
[PDF 178 KB]
(932)
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86105 |
Xie Gang (谢刚), Edward Xu, Niloufar Hashemi, Zhang Bo (张波), Fred Y. Fu, Wai Tung Ng |
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An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage |
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Chin. Phys. B
2012 Vol.21 (8): 86105-086105
[Abstract]
(1396)
[HTML 1 KB]
[PDF 1274 KB]
(1635)
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127305 |
Ma Xiao-Hua(马晓华), Jiao Ying(焦颖), Ma Ping(马平), He Qiang(贺强), Ma Ji-Gang(马骥刚), Zhang Kai(张凯), Zhang Hui-Long(张会龙), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses |
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Chin. Phys. B
2011 Vol.20 (12): 127305-127305
[Abstract]
(1492)
[HTML 1 KB]
[PDF 271 KB]
(1236)
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3494 |
Cheng Zhi-Qun(程知群), Cai Yong(蔡勇), Liu Jie(刘杰), Zhou Yu-Gang(周玉刚), Lau Kei May, and Chen J. Kevin |
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MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs |
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Chin. Phys. B
2007 Vol.16 (11): 3494-3497
[Abstract]
(1526)
[HTML 1 KB]
[PDF 519 KB]
(860)
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